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GD30MPS12J - Silicon Carbide Schottky Diode

GeneSiC

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Datasheet Details

Part number	GD30MPS12J
Manufacturer	GeneSiC
File Size	613.67 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GD30MPS12J-GeneSiC.pdf

GD30MPS12J Product details

Features

Gen4 Thin Chip Technology for Low VF.
Superior Figure of Merit QC.
VF.
100% Avalanche (UIL) Tested.
Enhanced Surge Current Withstand Capability.
Temperature Independent Fast Switching.
Low Thermal Resistance.
Positive Temperature Coefficient of VF.
High dV/dt Ruggedness Package TO-263-7 TM VRRM = IF (TC = 150°C) = QC = 1200 V 30 A 97 nC Case RoHS K A REACH Advantages.
Improved System Efficiency.

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Published: Dec 20, 2024 |