GSM4435S Datasheet, Mosfet, Globaltech

✔ GSM4435S Features

-30V/-9A,RDS(ON)=18mΩ@VGS=-10V
-30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS (ON)
SOP-8P package design Applications
LED

✔ GSM4435S Application

Features
-30V/-9A,RDS(ON)=18mΩ@VGS=-10V
-30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V
Super high density cell desi

PDF File Details

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Part number:

GSM4435S

Manufacturer:

Globaltech

File Size:

1.01MB

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📄 Datasheet

Description:

P-channel mosfet. GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

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GSM4435S P-Channel MOSFET Globaltech