GPT15N65 - POWER FIELD EFFECT TRANSISTOR

GPT15N65 Datasheet Preview — Preview of GPT15N65 PDF

Datasheet Details

Part number	GPT15N65
Manufacturer	Greatpower
File Size	296.80 KB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT15N65-Greatpower.pdf

GPT15N65 Product details

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.The new energy efficient design also offers a drain-to-source diode with a fast recovery time.Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are partic

Features

Robust High Voltage Termination.
Avalanche Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Ch.

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Published: Nov 8, 2017 |