Description
GPT15N65 / GPT15N65D POWER FIELD EFFECT TRANSISTOR GENERAL .
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over tim.
Features
* Robust High Voltage Termination
* Avalanche Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
* Diode is Ch
Applications
* in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients. PIN CONFIGURATION
TO-220F
TO-
