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GPT15N65D

POWER FIELD EFFECT TRANSISTOR

GPT15N65D Features

* Robust High Voltage Termination

* Avalanche Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Ch

GPT15N65D General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also .

GPT15N65D Datasheet (296.80 KB)

Preview of GPT15N65D PDF

Datasheet Details

Part number:

GPT15N65D

Manufacturer:

Greatpower

File Size:

296.80 KB

Description:

Power field effect transistor.

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GPT15N65D POWER FIELD EFFECT TRANSISTOR Greatpower

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