HM16P12D - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM16P12D Datasheet Preview — Preview of HM16P12D PDF

Datasheet Details

Part number	HM16P12D
Manufacturer	H&M Semiconductor
File Size	506.49 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM16P12D-HMSemiconductor.pdf

HM16P12D Product details

Description

The HM16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

VDS = -12V,ID = -16A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V.
Advanced trench MOSFET process technology.
Ultra low on-resistance with low gate charge.

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Published: Nov 27, 2018 |