HM3407B Datasheet - H&M Semiconductor

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HM3407B P-Channel Enhancement Mode Power MOSFET

HM3407B P-Channel Enhancement Mode Power MOSFET .
The HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

HM3407B-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM3407B

Manufacturer:

H&M Semiconductor

File Size:

348.13 KB

Description:

P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V D G S Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

HM3407B Distributors

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HM3407B P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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