HM40SDN02Q Dual Asymmetric N-Channel Enhancement Mode MOSFET

H&M Semiconductor

Description

HM40SDN02Q HM40SDN02Q Dual Asymmetric N-Channel Enhancement Mode MOSFET * .
This device uses advanced trench technology to provide excellent RDSON and low gate charge.

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Datasheet Specifications

Part number: HM40SDN02Q
Manufacturer: H&M Semiconductor
File Size: 627.53 KB
Datasheet: HM40SDN02Q-HMSemiconductor.pdf
Description: Dual Asymmetric N-Channel Enhancement Mode MOSFET

Features

* Pin configuration VDS VGS RDSON Typ. ID Top view 5.2mR@10V 20V ±20V 40A 6.8mR@4V5

Applications

* Applications
* Power Management in notebook computer
* Portable Equipment
* Battery Powered Systems
* Ordering Information Device Package Shipping HM40SDN02Q DFN3X3 5000/Reel Bottom View HM40SDN02Q YYWW Marking HM40SDN02Q
* Absolute Maximum Ratings(TA=25℃ unless ot

HM40SDN02Q Distributors

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HM40SDN02Q Dual Asymmetric N-Channel Enhancement Mode MOSFET H&M Semiconductor

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