Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
HM4410A, H&M Semiconductor
HM4410A
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM4410A uses advanced trench technology and design to provide excellent RDS(ON) with .
HM4410B, H&M Semiconductor
HM4410B
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM4410B uses advanced trench technology and design to provide excellent RDS(ON) with .
HM4412, H&M Semiconductor
HM4412
N-Channel Enhancement Mode Power MOSFET
Description
The HM4412 uses advanced trench technology to provide excellent RDS(ON) and low gate charg.
HM4412A, H&M Semiconductor
HM4412A
N-Channel Enhancement Mode Power MOSFET
Description
The HM4412A uses advanced trench technology to provide excellent RDS(ON) and low gate cha.
HM4402A, H&M Semiconductor
Description
The +0 $ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety.
HM4402C, H&M Semiconductor
HM4402C
N-Channel Enhancement Mode Power MOSFET
Description
The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with .
HM4402E, H&M Semiconductor
Description
The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety.