HM4430 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

+0 N-Channel Enhancement Mode Power MOSFET .
The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Datasheet Specifications

Features

* VDS =30V,ID =18A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell design for ultra low Rdson

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