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HM4435B - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM4435B
Manufacturer	H&M Semiconductor
File Size	413.48 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4435B-HMSemiconductor.pdf

HM4435B Product details

Description

The HM4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram 4435B Marking and pin Assignment.

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Published: Nov 27, 2018 |