HM4435B P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4435B P-Channel Enhancement Mode Power MOSFET .
The HM4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: HM4435B
Manufacturer: H&M Semiconductor
File Size: 413.48 KB
Datasheet: HM4435B-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

HM4435B Distributors

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HM4435B P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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