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HM4449 - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM4449
Manufacturer	H&M Semiconductor
File Size	464.12 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4449-HMSemiconductor.pdf

HM4449 Product details

Description

The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -7A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 42mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Nov 27, 2018 |