HM4487B Datasheet, Mosfet, H&M Semiconductor

HM4487B Features

• Mosfet
• VDS =-100V,ID =-3.5A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)
• Super high dense cell design
• Advanced trench process technology
• Reliable and rugged

PDF File Details

Part number:

HM4487B

Manufacturer:

H&M Semiconductor

File Size:

469.55kb

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📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

HM4487B Application

• Applications It is ESD protested. D G General Features
• VDS =-100V,ID =-3.5A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)
• Super hig

TAGS

HM4487B

H&M Semiconductor

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