HM6N70 Datasheet, Enhanced Vdmosfets, H&M Semiconductor

Silicon n-channel enhanced vdmosfets

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HM6N70

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H&M Semiconductor

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Description:

Silicon n-channel enhanced vdmosfets.

HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
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✔ HM6N70 Features

l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) TO-220) G D S TO-220 G D S l Low Reverse transfer capa

✔ HM6N70 Application

Power switch circuit of adaptor and charger. Absolute（ Tc= 25℃ unless otherwise specified）： Symbol VDSS I

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HM6N70 silicon N-channel Enhanced VDMOSFETs H&M Semiconductor