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HM6N70F Datasheet - H&M Semiconductor

silicon N-channel Enhanced VDMOSFETs

HM6N70F Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) TO-220) G D S TO-220 G D S l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Abs

HM6N70F General Description

HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher .

HM6N70F Datasheet (1.00 MB)

Preview of HM6N70F PDF

Datasheet Details

Part number:

HM6N70F

Manufacturer:

H&M Semiconductor

File Size:

1.00 MB

Description:

Silicon n-channel enhanced vdmosfets.

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HM6N70F silicon N-channel Enhanced VDMOSFETs H&M Semiconductor

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