Part number:
HM8N100F
Manufacturer:
H&M Semiconductor
File Size:
646.45 KB
Description:
N-channel enhanced vdmosfet.
Datasheet Details
HM8N100F , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and
HM8N100F Features
* l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanche energy Test Applications： Electric welder、Inverter. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM
Datasheet Details
HM8N100F
H&M Semiconductor
646.45 KB
N-channel enhanced vdmosfet.
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