HM8N100F N-channel Enhanced VDMOSFET

H&M Semiconductor

Description

HM8N100F General .
HM8N100F , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve s.

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Datasheet Specifications

Part number: HM8N100F
Manufacturer: H&M Semiconductor
File Size: 646.45 KB
Datasheet: HM8N100F-HMSemiconductor.pdf
Description: N-channel Enhanced VDMOSFET

Applications

* Electric welder、Inverter. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy

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HM8N100F N-channel Enhanced VDMOSFET H&M Semiconductor

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