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HM8N100F Datasheet - H&M Semiconductor

HM8N100F N-channel Enhanced VDMOSFET

HM8N100F , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and.

HM8N100F Features

* l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanche energy Test Applications： Electric welder、Inverter. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM

HM8N100F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM8N100F

Manufacturer:

H&M Semiconductor

File Size:

646.45 KB

Description:

N-channel enhanced vdmosfet.

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HM8N100F HM8N100F N-channel Enhanced VDMOSFET H&M Semiconductor

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