HM8N60F, HM8N60 Datasheet - H&M Semiconductor

HM8N60F 600V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

HM8N60F Features

* 7.5A, 600V, RDS(on) = 1.20Ω @VGS = 10 V

* Low gate charge ( typical 29nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Rating

HM8N60-HMSemiconductor.pdf

HM8N60F Datasheet Preview — This datasheet PDF includes multiple part numbers: HM8N60F, HM8N60. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HM8N60F, HM8N60

Manufacturer:

H&M Semiconductor

File Size:

303.53 KB

Description:

600v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: HM8N60F, HM8N60.
Please refer to the document for exact specifications by model.

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HM8N60F HM8N60 600V N-Channel MOSFET H&M Semiconductor

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