HM8N65F, HM8N65 Datasheet - H&M Semiconductor

HM8N65F 650V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devic.

HM8N65F Features

* 7.5A, 650V, RDS(on) = 1.20Ω (typical) @VGS = 10 V

* Low gate charge ( typical 29nC)

* High ruggedness

* Fast wsitching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maxi

HM8N65-HMSemiconductor.pdf

HM8N65F Datasheet Preview — This datasheet PDF includes multiple part numbers: HM8N65F, HM8N65. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HM8N65F, HM8N65

Manufacturer:

H&M Semiconductor

File Size:

501.06 KB

Description:

650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: HM8N65F, HM8N65.
Please refer to the document for exact specifications by model.

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HM8N65F HM8N65 650V N-Channel MOSFET H&M Semiconductor

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