HM8N02MR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM8N02MR N-Channel Enhancement Mode Power MOSFET .
The HM8N02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM8N02MR
Manufacturer: H&M Semiconductor
File Size: 560.68 KB
Datasheet: HM8N02MR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID = 8.0A RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 12mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

HM8N02MR Distributors

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HM8N02MR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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