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HM8N02MR - N-Channel Enhancement Mode Power MOSFET

HM8N02MR Description

HM8N02MR N-Channel Enhancement Mode Power MOSFET .
The HM8N02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM8N02MR Features

* VDS = 20V,ID = 8.0A RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 12mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
HM8N02MR
Manufacturer
H&M Semiconductor
File Size
560.68 KB
Datasheet
HM8N02MR-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM8N02MR-like datasheet

HM8N02MR Stock/Price