HMS130N20 N-Channel Super Trench II Power MOSFET

H&M Semiconductor

Description

HMS130N20, HMS130N20D N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

📥 Download Datasheet

HMS130N20 Datasheet Preview — Preview of HMS130N20 PDF

Datasheet Specifications

Part number: HMS130N20
Manufacturer: H&M Semiconductor
File Size: 812.37 KB
Datasheet: HMS130N20-HMSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =200V,ID =130A RDS(ON)=9.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=9.4mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

HMS130N20 Distributors

📁 Related Datasheet

HMS1355 HMS1360 HMS1360M HMS1360MH HMS1365MH HMS12832M4

📌 All Tags

HMS130N20 N-Channel Super Trench Power MOSFET H&M Semiconductor

H&M Semiconductor HMS130N20-like datasheet