HM2309B P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM2309B Description

HM2309B P-Channel 60V(D-S) GENERAL .
The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

HM2309B Features

* RDS(ON)≦188mΩ@VGS=-10V
* RDS(ON)≦266mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability

HM2309B Applications

* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -60 ±20 Unit V V 2309% Marking and pin Assignment SOT-23-3

📥 Download Datasheet

HM2309B Datasheet Preview — Preview of HM2309B PDF

Datasheet Details

Part number: HM2309B
Manufacturer: H&M Semiconductor
File Size: 894.67 KB
Datasheet: HM2309B-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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