HM2310DR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM2310DR Description

N-Channel Enhancement Mode Power MOSFET .
The HM2310DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2310DR Features

* VDS =60V,ID =5A RDS(ON)

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HM2310DR Datasheet Preview — Preview of HM2310DR PDF

Datasheet Details

Part number: HM2310DR
Manufacturer: H&M Semiconductor
File Size: 521.09 KB
Datasheet: HM2310DR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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