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HM8N60F, HM8N60 - 600V N-Channel MOSFET

H&M Semiconductor

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HM8N60F Datasheet Preview — This datasheet PDF includes multiple part numbers: HM8N60F, HM8N60. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number: HM8N60F, HM8N60
Manufacturer: H&M Semiconductor
File Size: 303.53 KB
Datasheet: HM8N60-HMSemiconductor.pdf
Description: 600V N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: HM8N60F, HM8N60.
Please refer to the document for exact specifications by model.

HM8N60F Product details

Description

This Power.

Features

7.5A, 600V, RDS(on) = 1.20Ω @VGS = 10 V.
Low gate charge ( typical 29nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Ga.

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600V N-Channel MOSFET H&M Semiconductor

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HM8N60F Stock/Price