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HMS7N80I - N-Channel Super Junction Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HMS7N80I
Manufacturer: H&M Semiconductor
File Size: 564.22 KB
Datasheet: HMS7N80I-HMSemiconductor.pdf
Description: N-Channel Super Junction Power MOSFET

HMS7N80I Product details

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge..

Features

New technology for high voltage device.
Low on-resistance and low conduction losses.
Small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant VDS 800 V RDS(ON)TYP 840 mΩ ID 7 A Application.
Power factor correction（PFC）.
Switched mode power supplies(SMPS).
Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking HMS7N80I TO-.

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N-Channel Super Junction Power MOSFET H&M Semiconductor

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HMS7N80I Stock/Price