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4N60I N-Channel MOSFET

4N60I Description

4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe　 SGS, RoHS TO-251 TO-252 IS TO-251 TO.
　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

4N60I Features

* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy

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Datasheet Details

Part number
4N60I
Manufacturer
HAOHAI
File Size
355.36 KB
Datasheet
4N60I-HAOHAI.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET HAOHAI
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