4N60S Datasheet - HAOHAI

N-Channel MOSFET

4N60S Features

* Higher Current Rating

* Lower RDS(on)

* Lower Capacitances

* Lower Total Gate Charge

* Tighter VSD Specifications

* Avalanche Energy

4N60S General Description

　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. 　　This new high energy device also offers a drain-to-source diode with fast recovery time. 　　Designed for high voltage, high speed switching applications such as power suplies, conv.

4N60S Datasheet (355.36 KB)

4N60S Datasheet Preview — Preview of 4N60S PDF

Datasheet Details

Part number:

4N60S

Manufacturer:

HAOHAI

File Size:

355.36 KB

Description:

N-channel mosfet.
4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe　 SGS, RoHS TO-251 TO-252 IS TO-251 TO.

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4N60S N-Channel MOSFET HAOHAI

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4N60S Features

4N60S General Description

Datasheet Details

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Description:

4N60S Distributor