Datasheet4U Logo Datasheet4U.com

4N60S, 4N60I N-Channel MOSFET

4N60S Description

4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe　 SGS, RoHS TO-251 TO-252 IS TO-251 TO.
　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

4N60S Features

* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 4N60S, 4N60I. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
4N60S, 4N60I
Manufacturer
HAOHAI
File Size
355.36 KB
Datasheet
4N60I-HAOHAI.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: 4N60S, 4N60I.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • 4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
  • 4N60-C - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 4N60-CB - N-CHANNEL MOSFET (UTC)
  • 4N60-E - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 4N60-N - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 4N60-Q - N-CHANNEL POWER MOSFET (UTC)
  • 4N60-R - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 4N60-S - N-CHANNEL POWER MOSFET (Unisonic Technologies)

📌 All Tags

N-Channel MOSFET HAOHAI
HAOHAI 4N60S-like datasheet