4N60S Datasheet - HAOHAI

4N60S N-Channel MOSFET

　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. 　　This new high energy device also offers a drain-to-source diode with fast recovery time. 　　Designed for high voltage, high speed switching applications such as power suplies, conv.

4N60S Features

* Higher Current Rating

* Lower RDS(on)

* Lower Capacitances

* Lower Total Gate Charge

* Tighter VSD Specifications

* Avalanche Energy

4N60S Datasheet (355.36 KB)