HPU700R950SA Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET HPU700R950SA General .
HPU700R950SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchi.

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Datasheet Specifications

Part number: HPU700R950SA
Manufacturer: HUAJING MICROELECTRONICS
File Size: 347.39 KB
Datasheet: HPU700R950SA-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 700 V 7A 112 W 0.78 Ω Symbol VDSS ID IDMa1 VGSS EAS a2 dv/dt a3 PD TJ，Tstg TL Parameter Drain-to-Source Voltage(VGS=0V) Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse

HPU700R950SA Distributors

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HPU700R950SA Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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