CS2N60F Silicon N-Channel Power MOSFET

HUAJING

Description

Huajing Discrete Devices Silicon General .
CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve sw.

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Datasheet Specifications

Part number: CS2N60F
Manufacturer: HUAJING
File Size: 335.55 KB
Datasheet: CS2N60F_HUAJING.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（ Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDM VGS EAS EAR IAR a1 Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Rating 600 2.0 1.45 8.0 ±

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CS2N60F Silicon N-Channel Power MOSFET HUAJING

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