HYG046N04LQ1C2 Datasheet, Mosfet, HUAYI

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Part number:

HYG046N04LQ1C2

Manufacturer:

HUAYI

File Size:

495.40kb

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📄 Datasheet

Description:

Single n-channel enhancement mode mosfet. DDDD DDDD SSSG GSSS Pin1 PPAK56-8L Applications Switching Application Power Management for DC/DC

HYG046N04LQ1C2 Application

• Applications
• Switching Application
• Power Management for DC/DC
• Battery Protection Ordering and Marking Information Si

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HYG046N04LQ1C2

HUAYI

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HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

HYG046N04LQ1U - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

HYG046N04LQ1V - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

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+<*3/4'89 3 &KDQQHO(QKDQFHPHQW0RGH026)(7 )HDWXUH z 9 $ 5'621 PȍW\S#9*6  9 5'621  PȍW\S#9*6  9 z .

HYG045P03LQ1U - P-Channel Enhancement Mode MOSFET (HUAYI)
+<*3/4'89 3 &KDQQHO(QKDQFHPHQW0RGH026)(7 )HDWXUH z 9 $ 5'621 PȍW\S#9*6  9 5'621  PȍW\S#9*6  9 z .

HYG045P03LQ1V - P-Channel Enhancement Mode MOSFET (HUAYI)
+<*3/4'89 3 &KDQQHO(QKDQFHPHQW0RGH026)(7 )HDWXUH z 9 $ 5'621 PȍW\S#9*6  9 5'621  PȍW\S#9*6  9 z .

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