HYG046N04LQ1U Datasheet, Mosfet, HUAYI

PDF File Details

Part number:

HYG046N04LQ1U

Manufacturer:

HUAYI

File Size:

469.52kb

Download:

📄 Datasheet

Description:

N-channel mosfet. GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications

  • Switching Application
  • Power Management for DC/DC
  • Datasheet Preview: HYG046N04LQ1U 📥 Download PDF (469.52kb)
    Page 2 of HYG046N04LQ1U Page 3 of HYG046N04LQ1U

    HYG046N04LQ1U Application

    • Applications
    • Switching Application
    • Power Management for DC/DC
    • Battery Protection Ordering and Marking Information N-C

    TAGS

    HYG046N04LQ1U
    N-Channel
    MOSFET
    HUAYI

    📁 Related Datasheet

    HYG046N04LQ1C2 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG046N04LQ1C2 Single N-Channel Enhancement Mode MOSFET Feature  40V/70A RDS(ON)= 4.3mΩ(typ.)@VGS = 10V RDS(ON)= 6.9mΩ(typ.)@VGS = 4.5V  100% Aval.

    HYG046N04LQ1D - N-Channel MOSFET (HUAYI)
    HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

    HYG046N04LQ1V - N-Channel MOSFET (HUAYI)
    HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

    HYG042N10NS1B - N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail.

    HYG042N10NS1P - N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail.

    HYG045P03LQ1D - P-Channel Enhancement Mode MOSFET (HUAYI)
    +<*3/4'89 3 &KDQQHO(QKDQFHPHQW0RGH026)(7 )HDWXUH z 9 $ 5'6 21 Pȍ W\S #9*6  9 5'6 21  Pȍ W\S #9*6  9 z .

    HYG045P03LQ1U - P-Channel Enhancement Mode MOSFET (HUAYI)
    +<*3/4'89 3 &KDQQHO(QKDQFHPHQW0RGH026)(7 )HDWXUH z 9 $ 5'6 21 Pȍ W\S #9*6  9 5'6 21  Pȍ W\S #9*6  9 z .

    HYG045P03LQ1V - P-Channel Enhancement Mode MOSFET (HUAYI)
    +<*3/4'89 3 &KDQQHO(QKDQFHPHQW0RGH026)(7 )HDWXUH z 9 $ 5'6 21 Pȍ W\S #9*6  9 5'6 21  Pȍ W\S #9*6  9 z .

    HYG006N04LS1B6 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100% .

    HYG010N06NS1TA - N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts