The HYG060N08NS1B by HUAYI is a N-Channel Enhancement Mode MOSFET. Below is the official datasheet preview.
| Part number | HYG060N08NS1B, HYG060N08NS1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 577.18 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 HYG060N08NS1P-HUAYI.pdf
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| Note |
This datasheet PDF includes multiple part numbers: HYG060N08NS1B, HYG060N08NS1P. Please refer to the document for exact specifications by model. |
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TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G060N08 XYMXXXXXX B G060N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI d
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