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HYG060N08NS1B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HYG060N08NS1B, a member of the HYG060N08NS1P N-Channel Enhancement Mode MOSFET family.

Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G060N08 XYMXXXXXX B G060N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fi

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Datasheet Details

Part number HYG060N08NS1B
Manufacturer HUAYI
File Size 577.18 KB
Description N-Channel Enhancement Mode MOSFET
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HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature  80V/105A RDS(ON)=5.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Motor control Pin Description TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G060N08 XYMXXXXXX B G060N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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