The HYG060N08NS1D by HUAYI is a N-Channel Enhancement Mode MOSFET. Below is the official datasheet preview.
| Part number | HYG060N08NS1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 697.08 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 HYG060N08NS1D-HUAYI.pdf
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S GD TO-252-2L S GD TO-251-3L S D G TO-251-3S N-Channel MOSFET Ordering and Marking Information D G060N08 XYMXXXXXX U G060N08 XYMXXXXXX V G060N08 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classi
📁 HYG060N08NS1D Similar Datasheet
