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HYG060N08NS1P - N-Channel Enhancement Mode MOSFET

The HYG060N08NS1P by HUAYI is a N-Channel Enhancement Mode MOSFET. Below is the official datasheet preview.

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Official preview page of the HYG060N08NS1P N-Channel Enhancement Mode MOSFET datasheet (HUAYI).

Datasheet Details

Part number HYG060N08NS1P
Manufacturer HUAYI
File Size 577.18 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG060N08NS1P-HUAYI.pdf
Additional preview pages of the HYG060N08NS1P datasheet.

HYG060N08NS1P Product details

Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G060N08 XYMXXXXXX B G060N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI d

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