HGTG12N60C3D Datasheet, Igbt, Harris Corporation

HGTG12N60C3D Features

• Igbt
• 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyper

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HGTG12N60C3D

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Harris Corporation

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📄 Datasheet

Description:

Ufs series n-channel igbt. The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The dev

HGTG12N60C3D Application

• Applications operating at moderate frequencies where low conduction losses are essential. PACKAGING AVAILABILITY PART NUMBER HGTG12N60C3D PACKAGE TO

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HGTG12N60C3D

Harris Corporation

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