* 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode o Description The HGTG12N60C3D is a MOS gated high voltage switching device combining the
HGTG12N60C3D Datasheet (111.25 KB)
HGTG12N60C3D
Harris Corporation
111.25 KB
Ufs series n-channel igbt.
S E M I C O N D U C T O R
HGTG12N60C3D
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Package
JEDEC STYLE TO-247
E C G
Janu.
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