HGTP3N60C3D Datasheet, Igbt, Harris Corporation

✔ HGTP3N60C3D Features

6A, 600V at TC = 25oC
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
Short Circuit Rating
Low Conduction Loss

✔ HGTP3N60C3D Application

operating at moderate frequencies where low conduction losses are essential. PACKAGING AVAILABILITY PART NUM

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Part number:

HGTP3N60C3D

Manufacturer:

Harris Corporation

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📄 Datasheet

Description:

Ufs series n-channel igbt. The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs

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HGTP3N60C3D UFS Series N-Channel IGBT Harris Corporation