Part number:
HGTP3N60A4D
Manufacturer:
Fairchild Semiconductor
File Size:
113.52 KB
Description:
N-channel igbt.
HGTP3N60A4D Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used
HGTP3N60A4D_FairchildSemiconductor.pdf
Datasheet Details
HGTP3N60A4D
Fairchild Semiconductor
113.52 KB
N-channel igbt.
📁 Related Datasheet
📌 All Tags