Datasheet4U Logo Datasheet4U.com

HGTP3N60A4D Datasheet - Fairchild Semiconductor

HGTP3N60A4D - N-Channel IGBT

HGTP3N60A4D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used

HGTP3N60A4D_FairchildSemiconductor.pdf

Preview of HGTP3N60A4D PDF
HGTP3N60A4D Datasheet Preview Page 2 HGTP3N60A4D Datasheet Preview Page 3

Datasheet Details

Part number:

HGTP3N60A4D

Manufacturer:

Fairchild Semiconductor

File Size:

113.52 KB

Description:

N-channel igbt.

📁 Related Datasheet

HGTP3N60A4 HGTP3N60B3 HGTP3N60B3D HGTP3N60C3 HGTP3N60C3D HGTP10N120BN

📌 All Tags

HGTP3N60A4D N-Channel IGBT Fairchild Semiconductor