* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used
HGTP3N60A4D Datasheet (113.52 KB)
HGTP3N60A4D
Fairchild Semiconductor
113.52 KB
N-channel igbt.
HGT1S3N60A4DS, HGTP3N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGT.
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