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HGTP3N60A4

N-Channel IGBT

HGTP3N60A4 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application

HGTP3N60A4 Datasheet (156.22 KB)

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Datasheet Details

Part number:

HGTP3N60A4

Manufacturer:

Intersil Corporation

File Size:

156.22 KB

Description:

N-channel igbt.
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 4825 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S, HGT1S3N60A4S and the.

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TAGS

HGTP3N60A4 N-Channel IGBT Intersil Corporation

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