* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTP3N60C3 Datasheet (243.35 KB)
HGTP3N60C3
Intersil Corporation
243.35 KB
N-channel igbt.
HGTD3N60C3S, HGTP3N60C3
Data Sheet January 2000 File Number 4139.5
6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS ga.
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