* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. T
HGTP3N60B3D Datasheet (154.31 KB)
HGTP3N60B3D
Intersil Corporation
154.31 KB
N-channel igbt.
HGTP3N60B3D, HGT1S3N60B3DS
Data Sheet January 2000 File Number 4414.1
7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTP.
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