HGTP3N60B3D Datasheet, Igbt, Intersil Corporation

HGTP3N60B3D Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage

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Part number:

HGTP3N60B3D

Manufacturer:

Intersil Corporation

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154.31kb

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📄 Datasheet

Description:

N-channel igbt.

HGTP3N60B3D Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTP3N60B3D

Intersil Corporation

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