Part number:
HGTP3N60B3D
Manufacturer:
Intersil Corporation
File Size:
154.31 KB
Description:
N-channel igbt.
HGTP3N60B3D_IntersilCorporation.pdf
Datasheet Details
HGTP3N60B3D Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. T
HGTP3N60B3D_IntersilCorporation.pdf
Datasheet Details
HGTP3N60B3D
Intersil Corporation
154.31 KB
N-channel igbt.
HGTP3N60B3D Distributor
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