* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTP3N60B3 Datasheet (141.53 KB)
HGTP3N60B3
Intersil Corporation
141.53 KB
N-channel igbt.
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Data Sheet January 2000 File Number 4368.1
7A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60B3S, HGT1S3N60B3S a.
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