IRF820 N-Channel Power MOSFETs

Harris

Description

S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

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Datasheet Specifications

Part number: IRF820
Manufacturer: Harris
File Size: 44.37 KB
Datasheet: IRF820-Harris.pdf
Description: N-Channel Power MOSFETs

Features

* 2.2A and 2.5A, 450V and 500V
* rDS(ON) = 3.0Ω and 4.0Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literatur

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. November 1997

IRF820 Distributors

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IRF820 N-Channel Power MOSFETs Harris

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