IRF820 Datasheet (Harris) - N-Channel Power MOSFETs

IRF820, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as swi

IRF820 Features

* 2.2A and 2.5A, 450V and 500V

* rDS(ON) = 3.0Ω and 4.0Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literatur