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IRF820

N-Channel Power MOSFETs

IRF820 Features

* 2.2A and 2.5A, 450V and 500V

* rDS(ON) = 3.0Ω and 4.0Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literatur

IRF820 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF820 Datasheet (44.37 KB)

Preview of IRF820 PDF

Datasheet Details

Part number:

IRF820

Manufacturer:

Harris

File Size:

44.37 KB

Description:

N-channel power mosfets.

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TAGS

IRF820 N-Channel Power MOSFETs Harris

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