IRFBC40 Datasheet, Mosfets, Harris

IRFBC40 Features

• Mosfets
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2Ω and 1.6Ω
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• R

PDF File Details

Part number:

IRFBC40

Manufacturer:

Harris

File Size:

27.77kb

Download:

📄 Datasheet

Description:

N-channel power mosfets. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, an

IRFBC40 Application

• Applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transist

TAGS

IRFBC40

Harris

📁 Related Datasheet

IRFBC40 - N-Channel Power MOSFET (STMicroelectronics)
® IRFBC40 N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET TYPE IRFBC40 s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 6.2 A TYPICAL RDS(o.

IRFBC40 - N-Channel Power MOSFET (Intersil Corporation)
IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field.

IRFBC40 - Power MOSFET (International Rectifier)
.

IRFBC40 - N-Channel Power MOSFET (Fairchild Semiconductor)
IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transist.

IRFBC40 - Power MOSFET (Vishay)
.vishay. IRFBC40 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs.

IRFBC40 - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor IRFBC40 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V,.

IRFBC40A - Power MOSFET (International Rectifier)
PD -91885A SMPS MOSFET IRFBC40A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed p.

IRFBC40A - Power MOSFET (Vishay)
.vishay. IRFBC40A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg.

IRFBC40A - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor IRFBC40A ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V.

IRFBC40APBF - HEXFET Power MOSFET (International Rectifier)
SMPS MOSFET PD - 94986 IRFBC40APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed.