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IRFBC40

N-Channel Power MOSFETs

IRFBC40 Features

* 6.2A and 5.4A, 600V

* rDS(ON) = 1.2Ω and 1.6Ω

* Repetitive Avalanche Energy Rated

* Simple Drive Requirements

* Ease of Paralleling

* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information P

IRFBC40 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRFBC40 Datasheet (27.77 KB)

Preview of IRFBC40 PDF

Datasheet Details

Part number:

IRFBC40

Manufacturer:

Harris

File Size:

27.77 KB

Description:

N-channel power mosfets.

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TAGS

IRFBC40 N-Channel Power MOSFETs Harris

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