H2N7000 - N-Channel Transistor

This page provides the datasheet information for the H2N7000, a member of the H2N7000_Hi N-Channel Transistor family.

Datasheet Summary

Description

The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Diss

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H2N7000
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	51.98 KB
Description	N-Channel Transistor
Datasheet	H2N7000 Datasheet
Additional preview pages of the H2N7000 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.10 Page No. : 1/5 Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature ..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..................

Published: Mar 22, 2005 |