| Part number | H2N7000, H2N7000_Hi |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 51.98 KB |
| Description | N-Channel Transistor |
| Datasheet |
 H2N7000_Hi-SincerityMocroelectronics.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: H2N7000, H2N7000_Hi. Please refer to the document for exact specifications by model. |
The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 400 mW Maximum Voltages and Currents (TA=25°C) BVDSS Drain to Source Voltage 60 V BVGSS Gate to Source Voltage 40 V ID Drain Current 200 mA Ele
