HJ1609 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HJ1609 General Description

* Low frequency high voltage amplifier. * Complementary pair with HJ1109. Absolute Maximum Ratings (Ta=25°C) * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1.25 W .

HJ1609 Datasheet (31.73 KB)

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HJ1609

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Hi-Sincerity Mocroelectronics

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31.73 KB

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6018-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1609 NPN EPITAXIAL PLAN.

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HJ1609 General Description

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