* Low Collector Saturation Voltage
* High Speed Switching Transistor Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW
HPN2369A
Hi-Sincerity Mocroelectronics
38.23 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 1/4 HPN2369A NPN EPITAXIAL PLAN.
📁 Related Datasheet
HPN2222A NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HPN2907A PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HPN800R1K4PD-G Silicon N-Channel Power MOSFET (CR Micro)
HPND-4005 Beam Lead PIN Diode (HP)
HPND-4018 Beam Lead PIN Diodes (HP)
HPND-4028 Beam Lead PIN Diodes (HP)
HPND-4028 Beam Lead PIN Diodes (AVAGO)
HPND-4038 Beam Lead PIN Diodes (HP)
HPND-4038 Beam Lead PIN Diodes (AVAGO)
HP-202 Photo diodes (KODENSHI KOREA CORP)
