* Low Collector Saturation Voltage
* High Speed Switching Transistor Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW
HPN2369A
Hi-Sincerity Mocroelectronics
38.23 KB
Npn epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 1/4
HPN2369A
NPN EPITAXIAL PLAN.
📁 Related Datasheet
HPN2222A - NPN EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6118 Issued Date : 1992.10.23 Revised Date : 2002.04.15 Page No. : 1/4
HPN2222A
NPN EPITAXIAL PLA.
HPN2907A - PNP EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
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HPN2907A
PNP EPITAXIAL PLAN.
HPN800R1K4PD-G - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
HPN800R1K4PD-G
General Description：
HPN800R1K4PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su.
HPND-4005 - Beam Lead PIN Diode
(HP)
Beam Lead PIN Diode Technical Data
HPND-4005
Features
• High Breakdown Voltage 120 V Typical
• Low Capacitance 0.017 pF Typical
• Low Resistance 4.7.
HPND-4018 - Beam Lead PIN Diodes
(HP)
Beam Lead PIN Diodes for Phased Arrays and Switches
Technical Data
HPND-4018 HPND-4028 HPND-4038
Features
• Low Capacitance 0.025 pF Maximum at 1 MH.
HPND-4028 - Beam Lead PIN Diodes
(HP)
Beam Lead PIN Diodes for Phased Arrays and Switches
Technical Data
HPND-4018 HPND-4028 HPND-4038
Features
• Low Capacitance 0.025 pF Maximum at 1 MH.
HPND-4028 - Beam Lead PIN Diodes
(AVAGO)
HPND-4028, HPND-4038 Beam Lead PIN Diodes for Phased Arrays and Switches
Data Sheet
Description
The HPND-4028 and 4038 beam lead PIN diodes are desi.
HPND-4038 - Beam Lead PIN Diodes
(HP)
Beam Lead PIN Diodes for Phased Arrays and Switches
Technical Data
HPND-4018 HPND-4028 HPND-4038
Features
• Low Capacitance 0.025 pF Maximum at 1 MH.
