HPN2369A, HPN2369A_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HPN2369A Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No.: 1/4 HPN2369A NPN EPITAXIAL PLAN.
The HPN2369A is designed for general purpose switching and amplifier applications. Low Collector Saturation Voltage. High.

HPN2369A Features

* Low Collector Saturation Voltage
* High Speed Switching Transistor Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW

📥 Download Datasheet

HPN2369A Datasheet Preview — This datasheet PDF includes multiple part numbers: HPN2369A, HPN2369A_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HPN2369A, HPN2369A_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 38.23 KB
Datasheet: HPN2369A_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HPN2369A, HPN2369A_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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