Datasheet4U Logo Datasheet4U.com

HPN800R1K4PD-G

Silicon N-Channel Power MOSFET

HPN800R1K4PD-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free l Zener-Protected Applications： Power switch circuit of adaptor, charger and LED. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 V

HPN800R1K4PD-G General Description

HPN800R1K4PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPN800R1K4PD-G Datasheet (236.56 KB)

Preview of HPN800R1K4PD-G PDF

Datasheet Details

Part number:

HPN800R1K4PD-G

Manufacturer:

CR Micro

File Size:

236.56 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

HPN2222A - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6118 Issued Date : 1992.10.23 Revised Date : 2002.04.15 Page No. : 1/4 HPN2222A NPN EPITAXIAL PLA.

HPN2369A - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 1/4 HPN2369A NPN EPITAXIAL PLAN.

HPN2907A - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6105 Issued Date : 1992.09.09 Revised Date : 2002.04.15 Page No. : 1/4 HPN2907A PNP EPITAXIAL PLAN.

HPND-4005 - Beam Lead PIN Diode (HP)
Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical • Low Capacitance 0.017 pF Typical • Low Resistance 4.7.

HPND-4018 - Beam Lead PIN Diodes (HP)
Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MH.

HPND-4028 - Beam Lead PIN Diodes (HP)
Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MH.

HPND-4028 - Beam Lead PIN Diodes (AVAGO)
HPND-4028, HPND-4038 Beam Lead PIN Diodes for Phased Arrays and Switches Data Sheet Description The HPND-4028 and 4038 beam lead PIN diodes are ­desi.

HPND-4038 - Beam Lead PIN Diodes (HP)
Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MH.

TAGS

HPN800R1K4PD-G Silicon N-Channel Power MOSFET CR Micro

Image Gallery

HPN800R1K4PD-G Datasheet Preview Page 2 HPN800R1K4PD-G Datasheet Preview Page 3

HPN800R1K4PD-G Distributor