2SA1171
Hitachi Semiconductor
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Silicon pnp epitaxial transistor.
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2SA1170 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1170
DESCRIPTION ·With MT-200 package ·High powe.
2SA1170 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2.
2SA1173 - Silicon PNP Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-140V(Min) ·Good Linearity .
2SA1175 - PNP SILICON TRANSISTOR
(NEC)
.
2SA1177 - PNP Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:ENN851H
PNP Epitaxial Planar Silicon Transistor
2SA1177
HF Amp Applications
Use
· Ideally suited for use in FM RF amplifiers, mixers.
2SA1179 - BIPOLAR TRANSISTORS
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
FEATURES
* High breakdown voltage
2SA1179
MECHANICAL DATA
*.
2SA1179 - PNP Transistor
(LGE)
2SA1179
SOT-23 Transistor(PNP)
1. BASE 2. EMITTER 3. COLLECTOR
SOT-23
Features
High breakdown voltage
MARKING: M
MAXIMUM RATINGS (TA=25℃ unless.
2SA1179 - Silicon Epitaxial Planar Transistor
(GME)
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High forward current transfer ratio hFE which has satisfactory linearity.
.
2SA1179 - PNP Silicon Plastic Encapsulated Transistor
(SeCoS)
Elektronische Bauelemente
2SA1179
-0.15A , -55V PNP Silicon Plastic Encapsulated Transistor
FEATURES
High breakdown voltage
RoHS Compliant Produc.
2SA1179 - PNP / NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number : EN3218B
2SA1179 / 2SC2812
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179 / 2SC2812 Low-Fr.
