Part number:
2SA1170
Manufacturer:
SavantIC
File Size:
157.33 KB
Description:
Silicon power transistor.
2SA1170
SavantIC
157.33 KB
Silicon power transistor.
📁 Related Datasheet
2SA1170 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2.
2SA1171 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA1171
Silicon PNP Epitaxial
Application
Low frequency small signal amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SA1171
Absolut.
2SA1173 - Silicon PNP Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-140V(Min) ·Good Linearity .
2SA1175 - PNP SILICON TRANSISTOR
(NEC)
.
2SA1177 - PNP Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:ENN851H
PNP Epitaxial Planar Silicon Transistor
2SA1177
HF Amp Applications
Use
· Ideally suited for use in FM RF amplifiers, mixers.
2SA1179 - BIPOLAR TRANSISTORS
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
FEATURES
* High breakdown voltage
2SA1179
MECHANICAL DATA
*.
2SA1179 - PNP Transistor
(LGE)
2SA1179
SOT-23 Transistor(PNP)
1. BASE 2. EMITTER 3. COLLECTOR
SOT-23
Features
High breakdown voltage
MARKING: M
MAXIMUM RATINGS (TA=25℃ unless.
2SA1179 - Silicon Epitaxial Planar Transistor
(GME)
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High forward current transfer ratio hFE which has satisfactory linearity.
.
