2SA1173 Silicon PNP Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min). Good Linearity of hFE. Low Saturation Voltage APPLICATIONS. Power am.

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Datasheet Specifications

Part number: 2SA1173
Manufacturer: Inchange Semiconductor
File Size: 78.55 KB
Datasheet: 2SA1173-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature

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2SA1173 Silicon PNP Power Transistor Inchange Semiconductor

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