Datasheet4U Logo Datasheet4U.com

2SA1173 - Silicon PNP Power Transistor

2SA1173 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min). Good Linearity of hFE. Low Saturation Voltage APPLICATIONS. Power am.

2SA1173 Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature

📥 Download Datasheet

Preview of 2SA1173 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SA1173
Manufacturer
Inchange Semiconductor
File Size
78.55 KB
Datasheet
2SA1173-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

📁 Related Datasheet

  • 2SA1170 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1171 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SA1175 - PNP SILICON TRANSISTOR (NEC)
  • 2SA1177 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA1179 - BIPOLAR TRANSISTORS (Rectron)
  • 2SA1179N - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA1102 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1103 - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SA1173-like datasheet