2SC3836 Datasheet - Hitachi Semiconductor

2SC3836 Silicon NPN Transistor

2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3836 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 60 50 15 300 300 150 55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Ite.

2SC3836 Datasheet (28.66 KB)