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2SJ291 Silicon P-Channel MOS FET

2SJ291 Description

2SJ291 Silicon P-Channel MOS FET November 1996 www.DataSheet4U.com Application High speed power switching .

2SJ291 Features

* Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. So

2SJ291 Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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Datasheet Details

Part number
2SJ291
Manufacturer
Hitachi Semiconductor
File Size
80.32 KB
Datasheet
2SJ291_HitachiSemiconductor.pdf
Description
Silicon P-Channel MOS FET

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