Datasheet Specifications
- Part number
- 2SJ291
- Manufacturer
- Hitachi Semiconductor
- File Size
- 80.32 KB
- Datasheet
- 2SJ291_HitachiSemiconductor.pdf
- Description
- Silicon P-Channel MOS FET
Description
2SJ291 Silicon P-Channel MOS FET November 1996 www.DataSheet4U.com Application High speed power switching .
Features
* Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. SoApplications
* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr2SJ291 Distributors
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