2SJ291 Datasheet, Mos Fet, Hitachi Semiconductor

Silicon p-channel mos fet

2SJ291

Hitachi Semiconductor

80.32 KB

Silicon p-channel mos fet.
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Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

based on the examples described herein. 5. No license is granted by implication or otherwise under any paten

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2SJ291 Silicon P-Channel MOS FET Hitachi Semiconductor